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Specifications |
| Manufacturer |
ONSEMI |
| Type of transistor |
IGBT |
| Collector-emitter voltage |
650V |
| Collector current |
40A |
| Power dissipation |
116W |
| Case |
TO247-3 |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
120A |
| Mounting |
THT |
| Gate charge |
120nC |
| Kind of package |
tube |
| Gross weight |
4.98 g |
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