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  Catalog » Semiconductors » IGBT : Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor  [Log In
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Igbt - Transistor  IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series  H3
Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price: 4.14 €
     
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Igbt - Transistor  IGBT, 600V, 75A, 428W, TO247-3, single transistor
Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Final price: 11.82 €
     
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Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor

Prod code: 40696

IKW75N60H3FKSA1.pdf PDF 

IKW75N60H3FKSA1

Price:  9.53 €
VAT:  2.29 €
Final price with tax:  11.82 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor IGBT
Technology TRENCHSTOP™
Collector-emitter voltage 600V
Collector current 75A
Power dissipation 428W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 225A
Mounting THT
Gate charge 470nC
Kind of package tube
Turn-on time 85ns
Turn-off time 332ns
Semiconductor structure single transistor
Features of semiconductor devices integrated anti-parallel diode
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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AOS218/247 - Thermally conductive pad ceramic TO218 TO247 L 21mm W 25mm
AOS218/247 - Thermally conductive pad ceramic TO218 TO247 L 21mm W 25mm

AOS247 - Thermally conductive pad ceramic TO247 L 20mm W 23mm D 1mm
AOS247 - Thermally conductive pad ceramic TO247 L 20mm W 23mm D 1mm

THF - Retaining spring TO220 TO247 TO248 TO3P stainless steel
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