|
Specifications |
| Manufacturer |
IXYS |
| Type of module |
IGBT |
| Semiconductor structure |
single transistor |
| Topology |
single transistor |
| Off state voltage max. |
600V |
| Collector current |
200A |
| Power |
830W |
| Max. forward impulse current |
1.2kA |
| Case |
SOT227B |
| Electrical mounting |
screw |
| Mounting |
screw |
| Operating temperature |
55...150°C |
| Gate - emitter voltage |
±20V |
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