STMicroelectronics N-Channel FDmesh™ Power MOSFETs
STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These 650V N-Channel FDmesh™ Power MOSFET features the worldwide best RDS(on) amongst the fast recovery diode devices, low input capacitance and gate charge, low gate input resistance and extremely high dv/dt and avalanche capabilities.
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Specifications |
| Manufacturer |
STMicroelectronics |
| Product Category |
Power MOSFET Transistors |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
650 V |
| Vgs - Gate-Source Breakdown Voltage |
25 V |
| Id - Continuous Drain Current |
49 A |
| Rds On - Drain-Source Resistance |
65 mOhms |
| Configuration |
Single |
| Qg - Gate Charge |
188 nC |
| Maximum Operating Temperature |
+ 150 C |
| Pd - Power Dissipation |
350 W |
| Mounting Style |
Through Hole |
| Package / Case |
TO-247-3 |
| Packaging |
Tube |
| Brand |
STMicroelectronics |
| Minimum Operating Temperature |
- 55 C |
| Series |
STW54NM65ND |
| Factory Pack Quantity |
30 |
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Relays
Chemical sprays
