|
Specifications |
| Manufacturer |
IXYS |
| Type of module |
MOSFET transistor |
| Semiconductor structure |
single transistor |
| Drain-source voltage |
75V |
| Drain current |
480A |
| Case |
SOT227B |
| Electrical mounting |
screw |
| Polarisation |
unipolar |
| On-state resistance |
1.9mŮ |
| Pulsed drain current |
1.5kA |
| Power dissipation |
940W |
| Technology |
GigaMOS™, HiPerFET™, TrenchT2™ |
| Kind of channel |
enhanced |
| Gate charge |
545nC |
| Reverse recovery time |
150ns |
| Gate-source voltage |
±30V |
| Mechanical mounting |
screw |
| Gross weight |
37.06 g |
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