|
Specifications |
| Manufacturer |
IXYS |
| Type of module |
MOSFET transistor |
| Semiconductor structure |
single transistor |
| Drain-source voltage |
40V |
| Drain current |
660A |
| Case |
SOT227B |
| Electrical mounting |
screw |
| Polarisation |
unipolar |
| On-state resistance |
0.85m |
| Pulsed drain current |
1.8kA |
| Power dissipation |
1040W |
| Technology |
TrenchT4 |
| Kind of channel |
enhanced |
| Gate charge |
860nC |
| Reverse recovery time |
60ns |
| Gate-source voltage |
15V |
| Mechanical mounting |
screw |
| Gross weight |
37.07 g |
| Prepack information |
Tube = 10 pcs |
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Semiconductors
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