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  Catalog » Semiconductors » IGBT : IGBT half-bridge x3, Urmax 1.2kV, Ic 50A, P 350W, Ifsm 100A  [Log In] 
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Transistor IGBT, 650V, 100A, 268W, TO247-4
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price: 8.53 €
     
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Igbt - Transistor IGBT, 650V, 40A, 283W, TO3P
Igbt - Transistor IGBT, 650V, 40A, 283W, TO3P
Final price: 4.32 €
     
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Igbt - IGBT half-bridge x3, Urmax 1.2kV, Ic 50A, P 350W, Ifsm 100A

Prod code: 33015
BSM50GD120DN2 PDF

BSM50GD120DN2
Price:  258.25 €
VAT:  61.98 €
Final price with tax:  320.22 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x3
Off state voltage max. 1.2kV
Collector current 50A
Power 350W
Max. forward impulse current 100A
Case ECONOPACK 2K
Application Inverter
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers: --- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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