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IGBT
: IGBT half-bridge x3, Urmax 1.2kV, Ic 50A, P 350W, Ifsm 100A
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Best viewed
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price:
8.53 €
What's New?
Igbt - Transistor IGBT, 1.2kV, 20A, 170W, TO247, 0.94mJ
Final price:
5.99 €
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Igbt - IGBT half-bridge x3, Urmax 1.2kV, Ic 50A, P 350W, Ifsm 100A
Prod code:
33015
PDF
BSM50GD120DN2
Click to enlarge
Price:
258.25 €
VAT:
61.98 €
Final price with tax:
320.22 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
INFINEON TECHNOLOGIES
Type of module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge x3
Off state voltage max.
1.2kV
Collector current
50A
Power
350W
Max. forward impulse current
100A
Case
ECONOPACK 2K
Application
Inverter
Electrical mounting
soldered
Mounting
screw
Operating temperature
40...125°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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