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  Catalog » Semiconductors » IGBT : IGBT half-bridge x3, Urmax 1.2kV, Ic 50A, P 350W, Ifsm 100A  [Log In
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Igbt - Transistor  IGBT, 600V, 23A, 167W, TO220
Igbt - Transistor IGBT, 600V, 23A, 167W, TO220
Final price: 3.32 €
     
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Transistor  IGBT, 650V, 75A, 197W, TO247-4, Series  H5
Transistor IGBT, 650V, 75A, 197W, TO247-4, Series H5
Final price: 7.50 €
     
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Igbt - IGBT half-bridge x3, Urmax 1.2kV, Ic 50A, P 350W, Ifsm 100A

Prod code: 33015

BSM50GD120DN2 PDF

BSM50GD120DN2

Price:  167.73 €
VAT:  40.26 €
Final price with tax:  207.99 €
Amount:   
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Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x3
Off state voltage max. 1.2kV
Collector current 50A
Power 350W
Max. forward impulse current 100A
Case ECONOPACK 2K
Application Inverter
Electrical mounting soldered
Mounting screw
Operating temperature 40...125C
Gate - emitter voltage 20V
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | LITTELFUSE | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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