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: IGBT half-bridge, NTC thermistor, Urmax 1.2kV, Ic 900A, P 5.1kW
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Best viewed
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price:
8.53 €
What's New?
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.3mJ, Eon 2.6mJ
Final price:
6.20 €
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Igbt - IGBT half-bridge, NTC thermistor, Urmax 1.2kV, Ic 900A, P 5.1kW
Prod code:
33035
PDF
FF900R12IE4
Click to enlarge
Price:
840.84 €
VAT:
201.80 €
Final price with tax:
1,042.64 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
INFINEON TECHNOLOGIES
Type of module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge, NTC thermistor
Off state voltage max.
1.2kV
Collector current
900A
Power
5.1kW
Max. forward impulse current
1.8kA
Case
AG-PRIME2-1
Electrical mounting
screw
Mounting
screw
Operating temperature
40...150°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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