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  Catalog » Semiconductors » IGBT : H-bridge, Urmax 600V, Ic 17A, P 82W, Ifsm 30A, ECO-PAC 2, soldered  [Log In
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Transistor  IGBT, 650V, 100A, 268W, TO247-4
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price: 8.53 €
     
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Igbt - Transistor  IGBT, 650V, 40A, 283W, TO3P
Igbt - Transistor IGBT, 650V, 40A, 283W, TO3P
Final price: 4.32 €
     
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Igbt - H-bridge, Urmax 600V, Ic 17A, P 82W, Ifsm 30A, ECO-PAC 2, soldered

Prod code: 33052

PSHI25/06 PDF

PSHI25/06

Price:  25.23 €
VAT:  6.05 €
Final price with tax:  31.28 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure transistor/transistor
Topology H-bridge
Off state voltage max. 600V
Collector current 17A
Power 82W
Max. forward impulse current 30A
Case ECO-PAC 2
Application H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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