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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor power P-MOSFET 55V 3,4A 2W Rds=0.105 SO8  [Log In] 
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Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 800V, 3.8A, 110W, TO220-3
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 800V, 3.8A, 110W, TO220-3
Final price: 2.90 €
     
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FET - Transistor N-MOSFET x2, unipolar, 30V, 6.5A, 1.3W, SO8
FET - Transistor N-MOSFET x2, unipolar, 30V, 6.5A, 1.3W, SO8
Final price: 0.98 €
     
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FET - Transistor power P-MOSFET 55V 3,4A 2W Rds=0.105 SO8

Prod code: 2855
IRF7342PBF PDF

IRF7342PBF
Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type P-MOSFET x2
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 55V
Drain current 3.4A
Power 2W
Case SO8
Gate-source voltage 20V
On-state resistance 105mŮ
Junction-to-ambient thermal resistance 62.5K/W
Mounting SMD
Gate charge 26nC
 
Availability: Warning Long delivery time
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Manufacturers: --- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
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