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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor P-MOSFET x2, unipolar, -60V, -3.9A, Idm -32A, 1.2W, SO8  [Log In
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Transistor N-MOSFET - Transistor  N-JFET, unipolar, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-MOSFET - Transistor N-JFET, unipolar, 2mA, 0.625W, TO92, Igt 50mA
Final price: 0.27 €
     
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Transistor N-MOSFET - Transistor  N-JFET, unipolar, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-MOSFET - Transistor N-JFET, unipolar, 2mA, 0.625W, TO92, Igt 50mA
Final price: 0.27 €
     
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Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -3.9A, Idm -32A, 1.2W, SO8

Prod code: 41807

DMP6050SSD-13

Price:  0.81 €
VAT:  0.19 €
Final price with tax:  1.00 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer DIODES INCORPORATED
Type of transistor P-MOSFET x2
Polarisation unipolar
Drain-source voltage -60V
Drain current -3.9A
Pulsed drain current -32A
Power dissipation 1.2W
Case SO8
Gate-source voltage ±20V
On-state resistance 55mΩ
Mounting SMD
Kind of package reel, tape
Kind of channel enhanced
 
Availability: With order
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Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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