|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
P-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
150V |
| Drain current |
2.2A |
| Power |
2.5W |
| Case |
SO8 |
| Gate-source voltage |
20V |
| On-state resistance |
240mΩ |
| Junction-to-case thermal resistance |
20K/W |
| Mounting |
SMD |
| Gate charge |
33nC |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
