| Specifications |
| Manufacturer | VISHAY |
| Type of transistor | P-MOSFET |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | -40V |
| Drain current | -50A |
| Pulsed drain current | -100A |
| Power dissipation | 73.5W |
| Gate-source voltage | ±20V |
| On-state resistance | 8.1mΩ |
| Mounting | SMD |
| Gate charge | 159nC |
| Kind of channel | enhancement |
| Case | DPAK, TO252 |
| Kind of package | reel, tape |
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