| Specifications |
| Manufacturer | TEXAS INSTRUMENTS |
| Type of transistor | N-MOSFET |
| Technology | NexFET™ |
| Polarisation | unipolar |
| Drain-source voltage | 80V |
| Drain current | 150A |
| Power dissipation | 300W |
| Case | TO220-3 |
| Gate-source voltage | ±20V |
| On-state resistance | 2.6mΩ |
| Mounting | THT |
| Gate charge | 76nC |
| Kind of package | tube |
| Kind of channel | enhancement |
| Heatsink thickness | 1.14...1.4mm |
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Semiconductors
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