|
Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
P-MOSFET |
| Technology |
SIPMOS™ |
| Polarisation |
unipolar |
| Drain-source voltage |
-100V |
| Drain current |
-15A |
| Power dissipation |
128W |
| Case |
PG-TO252-3 |
| Gate-source voltage |
±20V |
| On-state resistance |
0.2Ω |
| Mounting |
SMD |
| Kind of channel |
enhanced |
| |
|