|
Specifications |
| Manufacturer |
Infineon (IRF) |
| Type of transistor |
N-MOSFET |
| Technology |
HEXFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
55V |
| Drain current |
80A |
| Power dissipation |
200W |
| Case |
TO220AB |
| Gate-source voltage |
±20V |
| On-state resistance |
8mÙ |
| Mounting |
THT |
| Gate charge |
146nC |
| Kind of package |
tube |
| Gross weight |
1.94 g |
| |
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