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IGBT
: H-bridge, Urmax 1.2kV, Ic 33A, P 208W, Ifsm 50A, ECO-PAC 2, screw
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Best viewed
Igbt - Transistor IGBT, 1200V, 41A, 160W, TO247-3
Final price:
5.60 €
What's New?
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.3mJ, Eon 2.6mJ
Final price:
6.20 €
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Igbt - H-bridge, Urmax 1.2kV, Ic 33A, P 208W, Ifsm 50A, ECO-PAC 2, screw
Prod code:
33057
PDF
PSHI50D/12
Click to enlarge
Price:
34.81 €
VAT:
8.35 €
Final price with tax:
43.16 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
POWERSEM
Type of module
IGBT
Semiconductor structure
diode/transistor
Topology
H-bridge
Off state voltage max.
1.2kV
Collector current
33A
Power
208W
Max. forward impulse current
50A
Case
ECO-PAC 2
Application
H-bridge
Electrical mounting
soldered
Mounting
screw
Operating temperature
40...150°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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