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  Κατάλογος » Hμιαγωγοί » IGBT : H-bridge, Urmax 1.2kV, Ic 33A, P 208W, Ifsm 50A, ECO-PAC 2, screw  [Είσοδος
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Igbt - Transistor  IGBT, 650V, 60A, 375W, TO3P
Igbt - Transistor IGBT, 650V, 60A, 375W, TO3P
Τελική: 5.94 €
     
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Igbt - Transistor  IGBT, 600V, 75A, 428W, TO247-3, single transistor
Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Τελική: 11.82 €
     
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Igbt - H-bridge, Urmax 1.2kV, Ic 33A, P 208W, Ifsm 50A, ECO-PAC 2, screw

Κωδικός: 33057

PSHI50D/12 PDF

PSHI50D/12

Τιμή χωρίς ΦΠΑ:  33.15 €
Αξία ΦΠΑ:  7.96 €
Τελική με ΦΠΑ:  41.11 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure diode/transistor
Topology H-bridge
Off state voltage max. 1.2kV
Collector current 33A
Power 208W
Max. forward impulse current 50A
Case ECO-PAC 2
Application H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Διαθεσιμότητα: Με παραγγελία
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