|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
P-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
100V |
| Drain current |
13A |
| Power |
66W |
| Case |
IPAK |
| Gate-source voltage |
20V |
| On-state resistance |
205mΩ |
| Junction-to-case thermal resistance |
1.9K/W |
| Mounting |
THT |
| Gate charge |
38.7nC |
| |
|
Αισθητήρια
Καθαριστικά - Χημικά
