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: Transistor N-MOSFET, unipolar, 900V, 5.8A, Idm 36.8A, 200W, TO247
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Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 800V, 3.8A, 110W, TO220-3
Final price:
2.90 €
What's New?
FET - Transistor N-MOSFET x2, unipolar, 30V, 6.5A, 1.3W, SO8
Final price:
0.98 €
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Transistor N-FET - Transistor N-MOSFET, unipolar, 900V, 5.8A, Idm 36.8A, 200W, TO247
Prod code:
39825
PDF
STW11NK90Z
Click to enlarge
Price:
3.49 €
VAT:
0.84 €
Final price with tax:
4.33 €
Amount:
Usually shipped within 1 business day.
Usually shipped within 1 business day.
Specifications
Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SuperMesh™
Polarisation
unipolar
Drain-source voltage
900V
Drain current
5.8A
Pulsed drain current
36.8A
Power dissipation
200W
Case
TO247
Gate-source voltage
±30V
On-state resistance
980mΩ
Mounting
THT
Kind of package
tube
Kind of channel
enhanced
Features of semiconductor devices
ESD protected gate
Gross weight
4.51 g
Availability:
On stock
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TOSHIBA
|
VISHAY
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