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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 60V, 100A, 167W, PG-TO252-3  [Log In
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 300V, 36A, 300W, TO3P
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 300V, 36A, 300W, TO3P
Final price: 5.78 €
     
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 600V, 6A, Idm  24A, 35W, TO220
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 600V, 6A, Idm 24A, 35W, TO220
Final price: 6.20 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 60V, 100A, 167W, PG-TO252-3

Prod code: 35752

IPD031N06L3GATMA1 PDF

IPD031N06L3GATMA1

Price:  3.05 €
VAT:  0.73 €
Final price with tax:  3.78 €
Amount:   
Usually shipped within 1 business day.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 60V
Drain current 100A
Power dissipation 167W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 3.1mΩ
Mounting SMD
Kind of channel enhanced
Gross weight 0.42 g
 
Availability: On stock
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Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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