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: Transistor N-MOSFET, unipolar, 60V, 100A, 167W, PG-TO252-3
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Best viewed
FET - Transistor N-MOSFET 30V 260A 290W TO220AB
Final price:
4.63 €
What's New?
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Final price:
4.32 €
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Transistor N-FET - Transistor N-MOSFET, unipolar, 60V, 100A, 167W, PG-TO252-3
Prod code:
35752
PDF
IPD031N06L3GATMA1
Click to enlarge
Price:
3.05 €
VAT:
0.73 €
Final price with tax:
3.78 €
Amount:
Usually shipped within 2-3 business days.
Usually shipped within 2-3 business days.
Specifications
Manufacturer
INFINEON TECHNOLOGIES
Type of transistor
N-MOSFET
Technology
OptiMOS™ 3
Polarisation
unipolar
Drain-source voltage
60V
Drain current
100A
Power dissipation
167W
Case
PG-TO252-3
Gate-source voltage
±20V
On-state resistance
3.1mΩ
Mounting
SMD
Kind of channel
enhanced
Gross weight
0.42 g
Availability:
With order
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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