|
Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
N-MOSFET |
| Technology |
OptiMOS™ |
| Polarisation |
unipolar |
| Drain-source voltage |
55V |
| Drain current |
80A |
| Power dissipation |
210W |
| Case |
PG-TO263-3 |
| Gate-source voltage |
±20V |
| On-state resistance |
6.7mΩ |
| Mounting |
SMD |
| Gate charge |
95nC |
| Kind of channel |
enhanced |
| Gross weight |
1.706 g |
| |
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Semiconductors
DC-DC Converters
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