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: Transistor N-MOSFET, unipolar, 55V, 80A, 210W, PG-TO263-3
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Transistor N-MOSFET - Transistor N-JFET, unipolar, 2mA, 0.625W, TO92, Igt 50mA
Final price:
0.27 €
What's New?
Transistor P-FET - Transistor P-MOSFET, unipolar, -30V, -55A, 45W, TO252
Final price:
0.73 €
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FET - Transistor N-MOSFET, unipolar, 55V, 80A, 210W, PG-TO263-3
Prod code:
38339
PDF
IPB80N06S2L07
Click to enlarge
Price:
3.70 €
VAT:
0.89 €
Final price with tax:
4.59 €
Amount:
Usually shipped within 1 business day.
Usually shipped within 1 business day.
Specifications
Manufacturer
INFINEON TECHNOLOGIES
Type of transistor
N-MOSFET
Technology
OptiMOS™
Polarisation
unipolar
Drain-source voltage
55V
Drain current
80A
Power dissipation
210W
Case
PG-TO263-3
Gate-source voltage
±20V
On-state resistance
6.7mΩ
Mounting
SMD
Gate charge
95nC
Kind of channel
enhanced
Gross weight
1.706 g
Availability:
On stock
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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