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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 30V, 3.5A, 0.8W, SOT23  [Είσοδος
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Transistor P-FET - Transistor  P-MOSFET, unipolar, -60V, -2.6A, 2.3W, SOT223
Transistor P-FET - Transistor P-MOSFET, unipolar, -60V, -2.6A, 2.3W, SOT223
Τελική: 1.62 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 85V, 148A, Idm  850A, 300W, TO220AB
Transistor N-FET - Transistor N-MOSFET, unipolar, 85V, 148A, Idm 850A, 300W, TO220AB
Τελική: 3.81 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 30V, 3.5A, 0.8W, SOT23

Κωδικός: 38500

SI2306BDS-T1-E3 PDF

SI2306BDS-T1-E3

Τιμή χωρίς ΦΠΑ:  0.66 €
Αξία ΦΠΑ:  0.16 €
Τελική με ΦΠΑ:  0.82 €
Ποσότητα:   
* Αποστολή σε 1 εργάσιμη ημέρα.
Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 3.5A
Power dissipation 0.8W
Case SOT23
Gate-source voltage ±20V
On-state resistance 65mΩ
Mounting SMD
Gate charge 4.5nC
Kind of package reel,   tape
Kind of channel enhanced
Gross weight 0.052 g
 
Διαθεσιμότητα: Αμεσα
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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