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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 100V, 170mA, 360mW, SOT23, SIPMOS™  [Είσοδος
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, HEXFET, logic level, 40V, 327A
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, HEXFET, logic level, 40V, 327A
Τελική: 6.10 €
     
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 600V, 6A, Idm  24A, 35W, TO220
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 600V, 6A, Idm 24A, 35W, TO220
Τελική: 6.20 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 100V, 170mA, 360mW, SOT23, SIPMOS™

Κωδικός: 30000

BSS169H6327XTSA1 PDF

BSS169H6327XTSA1

Τιμή χωρίς ΦΠΑ:  0.41 €
Αξία ΦΠΑ:  0.10 €
Τελική με ΦΠΑ:  0.51 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 170mA
Power 360mW
Case SOT23
Gate-source voltage ±20V
On-state resistance 12Ω
Mounting SMD
Technology SIPMOS™
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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