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Specifications |
| Manufacturer |
STMicroelectronics |
| Type of transistor |
N-MOSFET |
| Technology |
MDmesh™ M2 |
| Polarisation |
unipolar |
| Drain-source voltage |
650V |
| Drain current |
13A |
| Pulsed drain current |
80A |
| Power dissipation |
170W |
| Case |
TO247 |
| Gate-source voltage |
±25V |
| On-state resistance |
180mΩ |
| Mounting |
THT |
| Kind of package |
tube |
| Kind of channel |
enhanced |
| Features of semiconductor devices |
ESD protected gate |
| Gross weight |
4.49 g |
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