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: Transistor N-MOSFET 30V 9.7A 2.0W SO8
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Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Final price:
4.32 €
What's New?
Transistor N-MOSFET - Transistor N-JFET, unipolar, 2mA, 0.625W, TO92, Igt 50mA
Final price:
0.27 €
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FET - Transistor N-MOSFET 30V 9.7A 2.0W SO8
Prod code:
2963
PDF
IRF8313PBF
Click to enlarge
Price:
0.76 €
VAT:
0.18 €
Final price with tax:
0.94 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
INTERNATIONAL RECTIFIER
Transistor type
N-MOSFET x2
Polarisation
unipolar
Transistor kind
HEXFET
Drain-source voltage
30V
Drain current
9.7A
Power
2W
Case
SO8
Gate-source voltage
20V
On-state resistance
15.5mŮ
Junction-to-ambient thermal resistance
62.5K/W
Mounting
SMD
Gate charge
6nC
Availability:
With order
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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Wednesday 14 January, 2026
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