|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
N-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
150V |
| Drain current |
1.9A |
| Power |
2.5W |
| Case |
SO8 |
| Gate-source voltage |
30V |
| On-state resistance |
280mŮ |
| Junction-to-ambient thermal resistance |
50K/W |
| Mounting |
SMD |
| Gate charge |
10nC |
| |
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