|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
N-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
100V |
| Drain current |
8.7A |
| Power |
35W |
| Case |
DPAK |
| Gate-source voltage |
20V |
| On-state resistance |
190mΩ |
| Junction-to-case thermal resistance |
4.28K/W |
| Mounting |
SMD |
| Gate charge |
6.9nC |
| |
|
Αισθητήρια
Καθαριστικά - Χημικά
