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  Κατάλογος » Hμιαγωγοί » IGBT : IGBT half-bridge x3, Urmax 1.2kV, Ic 10A, P 80W, Ifsm 20A, screw  [Είσοδος
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Igbt - Transistor  IGBT, 1.2kV, 50A, 190W, TO247
Igbt - Transistor IGBT, 1.2kV, 50A, 190W, TO247
Τελική: 7.99 €
     
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Igbt - Transistor  IGBT, 650V, 60A, 166W, TO247, Eoff  1.17mJ, Eon  2.36mJ
Igbt - Transistor IGBT, 650V, 60A, 166W, TO247, Eoff 1.17mJ, Eon 2.36mJ
Τελική: 4.30 €
     
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Igbt - IGBT half-bridge x3, Urmax 1.2kV, Ic 10A, P 80W, Ifsm 20A, screw

Κωδικός: 33008

BSM10GD120DN2E3224 PDF

BSM10GD120DN2E3224

Τιμή χωρίς ΦΠΑ:  106.86 €
Αξία ΦΠΑ:  25.65 €
Τελική με ΦΠΑ:  132.51 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x3
Off state voltage max. 1.2kV
Collector current 10A
Power 80W
Max. forward impulse current 20A
Case ECONOPACK 2K
Application Inverter
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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