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IGBT
: IGBT half-bridge, Urmax 600V, Ic 83A, P 379W, Ifsm 200A, soldered
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Best viewed
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price:
8.53 €
What's New?
Igbt - Transistor IGBT, 650V, 40A, 283W, TO3P
Final price:
4.32 €
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Igbt - IGBT half-bridge, Urmax 600V, Ic 83A, P 379W, Ifsm 200A, soldered
Prod code:
33059
PDF
PSI130/06
Click to enlarge
Price:
41.47 €
VAT:
9.95 €
Final price with tax:
51.42 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
POWERSEM
Type of module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Off state voltage max.
600V
Collector current
83A
Power
379W
Max. forward impulse current
200A
Case
ECO-PAC 2
Electrical mounting
soldered
Mounting
screw
Operating temperature
40...150°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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