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Transistor  IGBT, 650V, 100A, 268W, TO247-4
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price: 8.53 €
     
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Igbt - Transistor  IGBT, 650V, 60A, 250W, TO247, Eoff  1.3mJ, Eon  2.6mJ
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.3mJ, Eon 2.6mJ
Final price: 6.20 €
     
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Igbt - IGBT 3-phase bridge,3-phase diode bridge, NTC thermistor, PIM

Prod code: 33009

BSM10GP120 PDF

BSM10GP120

Price:  92.64 €
VAT:  22.23 €
Final price with tax:  114.87 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure diode/transistor
Topology IGBT 3-phase bridge, 3-phase diode bridge, NTC thermistor, brake chopper
Off state voltage max. 1.2kV
Collector current 10A
Power 100W
Max. forward impulse current 230A
Case PIM
Application Inverter, frequency changer
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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