|
Specifications |
| Manufacturer |
Infineon (IRF) |
| Type of transistor |
P-MOSFET |
| Technology |
HEXFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
-100V |
| Drain current |
-40A |
| Power dissipation |
200W |
| Case |
TO220AB |
| Gate-source voltage |
±20V |
| On-state resistance |
60mΩ |
| Mounting |
THT |
| Gate charge |
120nC |
| Kind of package |
tube |
| Gross weight |
1.983 g |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
