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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw  [Είσοδος
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Transistor P-FET - Transistor  P-MOSFET, unipolar, -60V, -2.6A, 2.3W, SOT223
Transistor P-FET - Transistor P-MOSFET, unipolar, -60V, -2.6A, 2.3W, SOT223
Τελική: 1.62 €
     
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 710V, 8.5A, Idm  34A, 25W, TO220FP
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Τελική: 4.01 €
     
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FET - Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw

Κωδικός: 40467

IXTN660N04T4

Τιμή χωρίς ΦΠΑ:  31.13 €
Αξία ΦΠΑ:  7.47 €
Τελική με ΦΠΑ:  38.60 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer IXYS
Type of module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 40V
Drain current 660A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 0.85m
Pulsed drain current 1.8kA
Power dissipation 1040W
Technology TrenchT4
Kind of channel enhanced
Gate charge 860nC
Reverse recovery time 60ns
Gate-source voltage 15V
Mechanical mounting screw
Gross weight 37.07 g
Prepack information Tube = 10 pcs
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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