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IGBT
: IGBT half-bridge x3, Urmax 1.2kV, Ic 10A, P 80W, Ifsm 20A, screw
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Best viewed
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price:
8.53 €
What's New?
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.3mJ, Eon 2.6mJ
Final price:
6.20 €
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Igbt - IGBT half-bridge x3, Urmax 1.2kV, Ic 10A, P 80W, Ifsm 20A, screw
Prod code:
33008
PDF
BSM10GD120DN2E3224
Click to enlarge
Price:
106.86 €
VAT:
25.65 €
Final price with tax:
132.51 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
INFINEON TECHNOLOGIES
Type of module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge x3
Off state voltage max.
1.2kV
Collector current
10A
Power
80W
Max. forward impulse current
20A
Case
ECONOPACK 2K
Application
Inverter
Electrical mounting
soldered
Mounting
screw
Operating temperature
40...125°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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