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Specifications |
| Manufacturer |
IXYS |
| Type of transistor |
IGBT |
| Technology |
GenX4™, |
| Collector-emitter voltage |
650V |
| Collector current |
110A |
| Power dissipation |
880W |
| Case |
TO264 |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
570A |
| Mounting |
THT |
| Gate charge |
183nC |
| Kind of package |
tube |
| Turn-on time |
65ns |
| Turn-off time |
250ns |
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