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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 700V, 3.5A, 17.9W, TO220FP  [Είσοδος
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Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 8A, Idm  52A, 48W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Τελική: 4.32 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 700V, 3.5A, 17.9W, TO220FP

Κωδικός: 40392

IPAN70R900P7S

Τιμή χωρίς ΦΠΑ:  0.88 €
Αξία ΦΠΑ:  0.21 €
Τελική με ΦΠΑ:  1.10 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 700V
Drain current 3.5A
Power dissipation 17.9W
Case TO220FP
Gate-source voltage 16V
On-state resistance 0.9
Mounting THT
Gate charge 6.8nC
Kind of package tube
Kind of channel enhanced
Features of semiconductor devices ESD protected gate
Gross weight 2.1 g
Prepack information Tube = 50 pcs
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
left left Δείτε ακόμα right
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