| Specifications |
| Manufacturer | INFINEON TECHNOLOGIES |
| Type of transistor | N-MOSFET |
| Technology | HEXFET |
| Polarisation | unipolar |
| Drain-source voltage | 60V |
| Drain current | 150A |
| Power dissipation | 300W |
| Case | TO220AB |
| Gate-source voltage | ±20V |
| On-state resistance | 3mΩ |
| Mounting | THT |
| Gate charge | 0.12C |
| Kind of package | tube |
| Kind of channel | enhancement |
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Relays
Semiconductors
DC-DC Converters
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