|
Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
N-MOSFET |
| Technology |
HEXFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
24V |
| Drain current |
429A |
| Power dissipation |
300W |
| Case |
D2PAK-7 |
| Gate-source voltage |
±20V |
| On-state resistance |
1mΩ |
| Mounting |
SMD |
| Gate charge |
180nC |
| Kind of channel |
enhanced |
| Gross weight |
1.56 g |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
