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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET 60V 210A 300W D2PAK  [Είσοδος
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Transistor N-FET - Transistor  N-MOSFET, unipolar, HEXFET, logic level, 30V, 140A
Transistor N-FET - Transistor N-MOSFET, unipolar, HEXFET, logic level, 30V, 140A
Τελική: 2.03 €
     
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 650V, 46A, 227W, PG-TO247-3
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 650V, 46A, 227W, PG-TO247-3
Τελική: 16.18 €
     
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FET - Transistor N-MOSFET 60V 210A 300W D2PAK

Κωδικός: 3358

IRFS3206PBF PDF

IRFS3206PBF

Τιμή χωρίς ΦΠΑ:  2.37 €
Αξία ΦΠΑ:  0.57 €
Τελική με ΦΠΑ:  2.94 €
Ποσότητα:   
* Αποστολή σε 1 εργάσιμη ημέρα.
Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type N-MOSFET
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 60V
Drain current 210A
Power 300W
Case D2PAK
Gate-source voltage 20V
On-state resistance 3mΩ
Junction-to-case thermal resistance 500mK/W
Mounting SMD
Gate charge 120nC
 
Διαθεσιμότητα: Αμεσα
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
left left Πελάτες που αγόρασαν αυτό το προϊόν επίσης αγόρασαν right
Διοδος - Diode  switching, SMD, 100V, 1A, SOD80
Διοδος - Diode switching, SMD, 100V, 1A, SOD80

Αντισταση - Resistor  metal film, THT, 220kΩ, 0.6W, ±1%, Ø2.5x6.8mm, 50ppm/°C
Αντισταση - Resistor metal film, THT, 220kΩ, 0.6W, ±1%, Ø2.5x6.8mm, 50ppm/°C

Driver IC - Driver, half bridge, Channels 2, DIP8
Driver IC - Driver, half bridge, Channels 2, DIP8

FET - Transistor N-MOSFET 100V 180A 370W D2PAK
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Διοδος Schottky - Diode  Schottky rectifying, 40V, 1A, DO41
Διοδος Schottky - Diode Schottky rectifying, 40V, 1A, DO41

Αντισταση - Resistor metal film THT 120kΩ 0.4W ±1% Ø1.9x3.7mm 50ppm/°
Αντισταση - Resistor metal film THT 120kΩ 0.4W ±1% Ø1.9x3.7mm 50ppm/°

--- - Diode rectifying 1kV 6A P600
--- - Diode rectifying 1kV 6A P600

Αντισταση - Resistor carbon film THT 1.5kΩ 250mW ±5% Ø2.3x6mm
Αντισταση - Resistor carbon film THT 1.5kΩ 250mW ±5% Ø2.3x6mm

left left Δείτε ακόμα right
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IRFB7545PBF - Transistor N-MOSFET, unipolar, 60V, 95A, 125W, TO220AB

IRLML5103TRPBF - Transistor  P-MOSFET, unipolar, HEXFET, logic level, -30V, -610mA
IRLML5103TRPBF - Transistor P-MOSFET, unipolar, HEXFET, logic level, -30V, -610mA

IPP80N06S2L07AKSA2 - Transistor  N-MOSFET, unipolar, 55V, 80A, 210W, PG-TO220-3-1
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IRF530A - Transistor  N-MOSFET, unipolar, 100V, 9.9A, 55W, TO220
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STP10NK80Z - Transistor  N-MOSFET, unipolar, 800V, 6A, 160W, TO220-3
STP10NK80Z - Transistor N-MOSFET, unipolar, 800V, 6A, 160W, TO220-3

STP11NM60ND - Transistor  N-MOSFET, unipolar, 600V, 6.3A, 90W, TO220-3
STP11NM60ND - Transistor N-MOSFET, unipolar, 600V, 6.3A, 90W, TO220-3

STP2NK90Z - Transistor  N-MOSFET, unipolar, 900V, 1.3A, 70W, TO220-3
STP2NK90Z - Transistor N-MOSFET, unipolar, 900V, 1.3A, 70W, TO220-3

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