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Specifications |
| Manufacturer |
Vishay |
| Transistor Polarity |
N and P-Channel |
| Drain-Source Breakdown Voltage |
20 V |
| Gate-Source Breakdown Voltage |
+/- 8 V |
| Continuous Drain Current |
4 A |
| Resistance Drain-Source RDS (on) |
36 mOhms, 100 mOhms |
| Configuration |
Dual |
| Maximum Operating Temperature |
+ 150 C |
| Mounting Style |
SMD/SMT |
| Package/Case |
1206-8 ChipFET |
| Packaging |
Reel |
| Forward Transconductance gFS (Max/Min) |
9.5 S, 22.4 S |
| Gate Charge Qg |
7.5 nC, 7 nC |
| Minimum Operating Temperature |
- 55 C |
| Power Dissipation |
3.1 W |
| Part # Aliases |
SI5515CDC-GE3 |
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Αισθητήρια
Καθαριστικά - Χημικά
