Specifications |
Manufacturer |
LITTELFUSE |
Type of module |
IGBT |
Semiconductor structure |
transistor/transistor |
Topology |
IGBT half-bridge |
Off state voltage max. |
1.2kV |
Collector current |
210A |
Power |
1.4kW |
Max. forward impulse current |
420A |
Case |
package D |
Electrical mounting |
screw |
Mounting |
screw |
Operating temperature |
40...150°C |
Gate - emitter voltage |
±20V |
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